jiangsu changji ang electronics technology co., ltd t o -92 plastic-encapsulate transistors MPS2222A transist or (npn ) fea ture complementary npn type available (mps2907a) to - 92 1. emitter 2. base 3. collect or www.cj-elec.com 1 , ,20 c oll ec t o r - bas e v ol tag e 75 v c oll ec t o r - e m itt e r v ol tag e 4 0 v e m itt e r - bas e v ol ta g e 6v c oll ec t o r curr e nt - c o ntinu o us 0. 6 a c oll ec t o r p owe r dissipati o n 6 2 5 m w jun c ti o n t em p e ratur e 1 st o rag e t em p e ratur e - 55 t h e r m a l r e sist an ce r om jun c ti o n o a m bi e nt / w 200 equivalent circuit 100 0pcs/ba g tape 2000pcs/box 2 22 p m s 2 a
www.cj-elec.com parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = 10ua , i e =0 75 v collector-emitter breakdown voltage v (br)ceo i c = 10ma , i b =0 40 v emitter-base breakdown voltage v (br)ebo i e = 10ua, i c =0 6 v collector cut-off current i cbo v cb = 60v, i e =0 10 na collector cut-off current i cex v ce = 60v,v eb(off) =3v 10 na emitter cut-off current i ebo v eb = 3 v, i c =0 100 na h fe(1) v ce =10v,i c = 150ma 100 300 h fe(2) v ce =10v,i c = 0.1ma 40 dc current gain h fe(3) * v ce =10v, i c = 500ma 42 v ce (sat)(1) * i c = 500ma, i b =50ma 0.6 v collector-emitter saturation voltage v ce (sat)(2) * i c = 150ma, i b =15ma 0.3 v base-emitter saturation voltage v be( sat) * i c = 500ma, i b = 50ma 1.2 v delay time t d 10 ns rise time t r v cc =30v, v eb( off) =-0.5v, i c =150ma,i b1 =15ma 25 ns storage time t s 225 ns fall time t f v cc =30v,ic=150ma,i b1 =i b2 =15ma 60 ns transition frequency f t v ce =20v, i c =20ma, f=100mhz 300 mhz * pulse test classification of h fe(1) rank l h range 100-200 200-300 a t =25 unless otherwise specified
0.1 1 10 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 11 0 0 50 100 150 200 250 300 0.1 1 10 100 10 100 1000 0 25 50 75 100 125 150 0 125 250 375 500 625 750 1 10 100 0.0 0.4 0.8 1.2 11 01 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0 1 02 03 04 05 0 0 40 80 120 160 200 f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib c ob c ib capacitance c (pf) reverse voltage v (v) common emitter v ce =10v 600 t a =100 t a =25 collector current i c (ma) base-emmiter voltage v be (v) common emitter v ce =20v t a =25 20 70 30 transition frequency f t (mhz) collector current i c (ma) common emitter v ce =10v 600 i c t a =25 t a =100 dc current gain h fe collector current i c (ma) p c t a collector power dissipation p c (mw) ambient temperature t a ( ) 600 =10 i c v besat t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (ma) i c f t v be i c h fe 600 =10 t a =100 t a =25 i c v cesat collector-emitter saturation voltage v cesat (v) collector current i c (ma) common emitter t a =25 1ma 900ua 800ua 700ua 600ua 500ua 400ua 300ua 200ua i b =100ua static characteristic collector current i c (ma) collector-emitter voltage v ce (v) www.cj-elec.com ,,201 typical characteristics
a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d4 . 4.700 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 1.270 typ 0.050 typ
7 d s h d q g 5 h h o z z z f m h o h f f r p
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